Исследование распыления твердых тел при облучении высокоэнергичными тяжелыми ионами

• Автор: Али Саид Халил
• Шифр специальности: 01.04.07
• Научная степень: Кандидатская
• Год защиты: 2005
• Место защиты: Дубна
• Количество страниц: 180 с. : ил.

CONTENT OF THESIS
I. INTRODUCTION
CHAPTER 1. THE PHENOMENON OF INELASTIC SPUTTERING BY SWIFT HEAVY ION IRRADIATION
1.1. Phenomenon of inelastic sputtering by swift heavy ion irradiation
1.2. Dependence of inelastic sputtering on the structure of targets
1.3. Theoretical models of inelastic sputtering
1.4. Relaxation of electronic excitations and models of inelastic sputtering
of metals
1.5. Conclusion 41 CHAPTER 2. THE TEMPERATURE IN TRACKS OF HEAVY IONS WITH
HIGHLY SPECIFIC IONIZATION ENERGY LOSS IN MODEL OF THERMAL PEAK
2.1. Introduction
2.2. Temperature effects in model of thermal peak
2.3. Pressure dependence of model parameters
2.4. Numerical scheme of calculation and algorithms
2.5. Approximate evaluation of temperature in ion track
2.6. Conclusion
CHAPTER 3. INFLUENCE OF DEFECT STRUCTURE ON THE SURFACE SPUTTERING OF METALS AND STAINLESS STEEL UNDER SWIFT HEAVY ION IRRADIATION IN INELASTIC ENERGY LOSS REGIME
3.1. Introduction
3.2. Ion facility for irradiation of samples by swift heavy ions
3.3. Experimental methods and results of sputtering of metals and steel under irradiation with swift heavy ions at high fluences
3.4. Experimental results and models of gold sputtering irradiated by
86Kr ions
3.5. Conclusion 102 CHAPTER 4. THE CHANGES OF SURFACE STRUCTURE OF HIGHLY
ORIENTED PYROLITIC GRAPHITE (HOPG) UNDER IRRADIATION WITH SWIFT HEAVY IONS
4.1. Introduction
4.2. Observation of inelastic induced surface effects in HOPG
4.3. Conclusion
CHAPTER 5. THE SURFACE CHANGES OF SILICON SINGLE CRYSTAL UNDER IRRADIATION BY SWIFT KRYPTON IONS
5.1. Introduction
5.2. Surface changes of crystalline silicon irradiated by swift krypton ions
5.3. Temperature estimations based on thermal spike model
5.4. Conclusion
CONCLUSION
REFERENCES
• ACKNOWLEDGMENTS

orientations) and liquid phase, respectively, and kM.v - specific heat of vaporization.
The number of atoms in the lattice which will be evaporated from overheated zone, moving walls/boundaries which have coordinates r=RM_y(t) and Z=ZM_v{t), from unit of area for unit of time are given by following equations:
dnr (r = RM_V - 0, z, t) _ pKi dRM,v
dt M, dt 2 KRM_vZM_vMi dt
dnz{r,z — Zt) ^ pM dZM_v ^ 1 dMz
dt M, dt nR}u_vM, dt
where and -mass of target atoms evaporated from the of area of cylinder
side surface with radius r=RM.y{t) and high (depth) ZM-,{t) and from the bottom cylinder at Z=ZM_i{t) for unit of time, M-, - target atomic mass and pM - material density in the liquid state.
Expression for the rate of atom evaporation from the target surface under ion bombardment with high ionization energy losses are given in ref. [92]:
Here N - atomic density in liquid phase; Uq - binding energy of atoms at the liquid surface, which may be evaluated as ~1 eV [92, 93]. So, this must fulfill the condition: