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Development and investigation of beam and plasma methods for improving the performance properties of the products made of metal materials/Разработка и исследование пучково-плазменных методов повышения

  • Автор:

    Уемура, Кензуке

  • Шифр специальности:

    01.04.07

  • Научная степень:

    Докторская

  • Год защиты:

    2011

  • Место защиты:

    Москва

  • Количество страниц:

    67 с. : 167 ил.

  • Стоимость:

    700 р.

    499 руб.

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Страницы оглавления работы

Contents P •
Preface
Introduction
Chapter 1. Deposition of Functional Coatings
1. Diamond Like Carbon (DLC)
1-2. System construction - Graphite pulse arc sputtering systems
2. CN0.s DLC
3. Structure, Characterization, Tribology, and Morphology of DLC
3-1. Structure of Sp3 and Sp2
3-2. Characterization
3-2.1 Internal stress
3-2.2 Thickness (non-destructive way to measure DLC film thickness -Nuclear reaction analysis (NRA)
3-2.3 Thermal conductivity- 3ramethod
3-2-4 Other properties
3-3. Tribology and Morphology
3-3.1 Hardness
3-3.2 Adhesion
3-3.3 Friction
3-3.4 Wear
3-3.5 Wetting (Hydrophobic)
4. Conclusion
Chapter 2. Materials Modification
1. Electron Beam Irradiation
1-1 Explosive Electron Emission
1-2 Electron Transport
1-3 Energy measurement
2. Plasma Ion Treatment
3. Ion Implantation
Chapter 3. Application of Beam-Plasma Technologies
1. Dies and forms
1-1. Forming Dies
Conclusion

1-2. Extrusion dies - Diesel Particulate Filter (DPF)
Conclusion
1-3 Plastic Dies
Conclusion
2. Medical applications
Conclusion
3. Cutting tools and Ion etching (IE)
Conclusion
4. Engine components
Conclusion
5. DLC on carbon
Conclusion
6. Nano-carbon, Nano-carbon Onion and nano-diamond (NC, NCO,ND)
Conclusion and Consideration
7. Application of Ultra Violet (UV) irradiation for surface polishing
Conclusion
8. Commodity - Shaving Blades
Conclusion
Implications and Conclusions
Bibliography
Acknowledgements

PREFACE
The content here is a portion of the author's life work that was done with Russian friends and the rest portions on the works mainly with the friends in the United States were omitted. Due to the papers limitation, the details on SOLO, DUET and others to be mentioned in Chapter 2 had also to be cut off unfortunately. These will be described in other opportunities.
The characterization instruments that were applied for the studies are listed below. These are in our Laboratory or nearby equipped and the instruments outsides the Laboratory are with the notes in the referred page.
X-ray diffraction; XRD RfNT-Ultimalll, Rigaku, Japan
Contact Angle Meter; CA-S Micro#2, Kyowa Interface Science, Japan
Scanning Electron Microscope; SEM, JSM-5600, 5510, JEOL, Japan
Electron Probe Micro-Analysis, Energy-Dispersive X-ray Spectroscopy; EPMA, EDS, JED 2200, JEOL, Japan
Dispersive Raman Spectrometer; NRS-3100, JASCO, Japan
Fourier Transform Infrared Spectrophotometer; FTIR, Perkin Elmer, Japan
Field Emission Transmission Electron Microscope; HRTEM, JEM-2200FS, JEOL, Japan
Laser Microscope; LM, VK-8500, Keyence, Japan
Metallugical Microscope ; BX60M, Olympas, Japan
Vickers Microhardness Tester; HM-114, Akashi, Japan
Rockwell Hardness Tester; ARK-600, Akashi, Japan
Surface Property Tester; HEIDON 14DR, Shinto Science, Japan
Atomic Forced Microscope; AFM, NANOPICS 1000, Seiko Instrument, Japan
Dynamic Ultra Micro Hardness Tester; DUH-211, Shimazu, Japan

In case,
4 - t}+^(1)
P: The electric power per unit length impressed to a small-gage wire-like metal film. In a
formula (1), the 1st clause shows a substrate and the 2nd clause shows contribution of a thin film.
Difference of ATjn.phasc (co) dues the base material and the thin film. The thermal conductivity of the thin film is called for equation (2) types drawn (co) from AT s+f(co)- AT s.

7 2b $rs+f(v)-ATs(m) ]
Key point is how to make the wire-like metal strip with several pm width and the length several mm. Since DLC physical-properties value measurement using the method is not yet carried out, the measurement result of in-phase ingredient AT (co) of the exchange temperature of the small-gage wirelike metal thin film manufactured by the SiNx thin film on Si board is shown as a reference in Fig. 31.

10 100 Frequency f / Hz

Fig. 31.

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